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Si3443CDV
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
? Halogen-free According to IEC 61249-2-21
V DS (V)
- 20
R DS(on) ( ? )
0.060 at V GS = - 4.5 V
0.084 at V GS = - 2.7 V
0.100 at V GS = - 2.5 V
I D (A) a
- 4.7
- 3.9
- 3.4
Q g (Typ.)
7.53 nC
Definition
? TrenchFET ? Power MOSFET
? PWM Optimized
? 100 % R g Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? HDD
? Asynchronous Rectification
? Load Switch for Portable Devices
TSOP-6
Top View
(4) S
1
6
3 mm
2
5
(3) G
Marking Code
3
4
AL
XXX
Lot Tracea b ility
and Date Code
2. 8 5 mm
Part # Code
(1, 2, 5, 6) D
Orderin g Information: Si3443CD V -T1-E3 (Lead (P b )-free)
Si3443CD V -T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
- 20
± 12
- 5.97
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
- 4.6
- 4.7 b, c
- 3.4 b, c
- 20
- 2.67
- 1.71 b, c
3.2
A
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
2.05
2 b, c
W
T A = 70 °C
1.28 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient b, d t ? 5s
Maximum Junction-to-Foot (Drain) Steady State
Symbol
R thJA
R thJF
Typical
51
32
Maximum
62.5
39
Unit
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 110 °C/W.
Document Number: 74495
S12-0335-Rev. C, 13-Feb-12
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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